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Publikace > 'Silicon planar MESA diodes as radiation detectors'

Silicon planar MESA diodes as radiation detectors

Autor

Houdayer A.,	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Lebel C.,	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Leroy Claude, Prof.	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Roy Patric,	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Linhart Vladimir, Ing. Ph.D.	UTEF
Pospíšil Stanislav, DrSc. Ing.	UTEF
Sopko Bruno,	KF FSI ČVUT
Courtemanche S.,	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Stafford M.C.,	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7

Rok

2002

Časopis

Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595

Web

http://dx.doi.org/10.1016/S0168-9002(01)01646-1

Obsah

Silicon diodes built according to the planar MESA process are investigated for their possible use as radiation detectors. Electrical characteristics of planar MESA (PM) detectors are studied as a function of applied bias voltage and 10 MeV proton fluence in view of possible application in high-radiation environment. A comparison is made between the features of PM and silicon standard planar (SP) detectors.

Příklad citace článku:

A. Houdayer, C. Lebel, C. Leroy, P. Roy, V. Linhart, S. Pospíšil, B. Sopko, S. Courtemanche, M. Stafford, "Silicon planar MESA diodes as radiation detectors", Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595 (2002)

Hledat

Události

IEEE NSS/MIC/RTSD