> 'Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration'
Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration
||University of Hamburg, II Institut fur Experimentalphysik, Gbd. 67b, Luruper Chaussee 149, 22761 Hamburg, Germany
|Kohout Zdeněk, RNDr.
|Linhart Vladimir, Ing. Ph.D.
|Pospíšil Stanislav, DrSc. Ing.
||KF FSI ČVUT
|et al. ,
Nuclear Instruments and Methods in Physics Research A 466 (2001) 308–326
The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering
technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary Oenrichment of about 2x10^17 O/cm^3 in the normal detector processing. Systematic investigations have been carried out
on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5x10^14 cm^-2 (1MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the ‘‘Hamburg model’’: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to
charged and neutral hadron irradiation.
Cite article as:
G. Lindstrom, Z. Kohout, V. Linhart, S. Pospíšil, B. Sopko, . et al., "Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration", Nuclear Instruments and Methods in Physics Research A 466 (2001) 308–326 (2001)