ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
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ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
ČVUT - České vysoké učení technické v Praze
Publikace  > Příspěvky ve sbornících konferencí  > 'Evaluation of Silicon Monolithic APS as a Neutron Detector'
Evaluation of Silicon Monolithic APS as a Neutron Detector

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2009

Časopis
2009 IEEE Nuclear Science Symposium Conference Record, Pages: 1658-1661, doi: 10.1109/NSSMIC.2008.4774835

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Progress in the development of neutron imaging facilities requires more sophisticated and advanced tools for high resolution and efficient neutron detection. This paper reports on the evaluation of CMOS Monolithic Active Pixel Sensor (MAPS) technology as a neutron detector. The sensor HEPAPS4, which was originally designed for high energy physics applications, was coated with two types of conversion material. The 6LiF converter is suitable for the detecting thermal neutrons, while the polyethylene converter is used for the tracking fast neutrons. The results showed that such a technology is suitable for the detection of both fast and thermal neutrons.

Příklad citace článku:
D. Maneuski, L. Eklund, V. O'Shea, S. Pospíšil, Z. Vykydal, "Evaluation of Silicon Monolithic APS as a Neutron Detector", 2009 IEEE Nuclear Science Symposium Conference Record, Pages: 1658-1661, doi: 10.1109/NSSMIC.2008.4774835 (2009)

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