ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
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ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
ČVUT - České vysoké učení technické v Praze
Publikace  > Příspěvky ve sbornících konferencí  > 'The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements'
The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements

Autor

Rok
2008

Časopis
IEEE NSS/MIC/RTSD Conf. Proc.

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Obsah
This work aims at the characterization of cadmiumtelluride detector bump-bonded on the TimePix readout chip and the evaluation of its potential as a tool to study the double beta decay (bb) processes (such as b−b− or EC/EC), typically performed in ultra low background conditions. First tests with the CdTe pixelated sensor (256×256 pixel matrix, 55μm pitch, 1mm sensor thickness) have been performed. The results of the device calibration and testing of the spectroscopic properties as well as the estimation of intrinsic background of the device are presented.

Příklad citace článku:
P. Čermák, I. Štekl, V. Bočarov, J. Jakůbek, S. Pospíšil, M. Fiederle, K. Zuber, "The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements", IEEE NSS/MIC/RTSD Conf. Proc. (2008)

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