The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements
Autor
Rok
2008
Časopis
IEEE NSS/MIC/RTSD Conf. Proc.
Web
Obsah
This work aims at the characterization of cadmiumtelluride
detector bump-bonded on the TimePix readout chip and
the evaluation of its potential as a tool to study the double beta
decay (bb) processes (such as b−b− or EC/EC), typically
performed in ultra low background conditions.
First tests with the CdTe pixelated sensor
(256×256 pixel matrix, 55μm pitch, 1mm sensor thickness) have
been performed. The results of the device calibration and testing
of the spectroscopic properties as well as the estimation of
intrinsic background of the device are presented.
Příklad citace článku:
P. Čermák, I. Štekl, V. Bočarov, J. Jakůbek, S. Pospíšil, M. Fiederle, K. Zuber, "The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements", IEEE NSS/MIC/RTSD Conf. Proc. (2008)