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ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
ČVUT - České vysoké učení technické v Praze
Publikace  > Články v impaktovaných časopisech  > 'Scanning of irradiated silicon detectors using alpha particles and low-energy protons'
Scanning of irradiated silicon detectors using alpha particles and low-energy protons

Autor
Casse G.L. CERN, EP Division, CH-1211 Geneva 23, Switzerland
Doležal Zdeněk Nuclear Center, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, Praha 8 CZ-180 00, Czech Republic
Glaser M. CERN, EP Division, CH-1211 Geneva 23, Switzerland
Kohout Zdeněk, RNDr. UTEF
Koníček Jan, RNDr.CSc. UTEF
Lemeilleur F. CERN, EP Division, CH-1211 Geneva 23, Switzerland
Leroy Claude, Prof. Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Linhart Vladimir, Ing. Ph.D. UTEF
Mareš J.J. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, CZ-16253 Prague 6, Czech Republic
Pospíšil Stanislav, DrSc. Ing. UTEF
Roy Patric Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Sopko Bruno KF FSI ČVUT
Šiňor Milan, Ing., PhD., Doc. KFE FJFI CVUT
Švejda J. Nuclear Center, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, Praha 8 CZ-180 00, Czech Republic
Vorobel V. Nuclear Center, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, Praha 8 CZ-180 00, Czech Republic
Wilhelm I. Nuclear Center, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, Praha 8 CZ-180 00, Czech Republic

Rok
1999

Časopis
Nuclear Instruments and Methods in Physics Research A 434 (1999) 118-130

Web


Obsah
In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5 MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection e$ciency was determined as a function of fluence.

Příklad citace článku:
G. Casse, Z. Doležal, M. Glaser, Z. Kohout, J. Koníček, F. Lemeilleur, C. Leroy, V. Linhart, J. Mareš, S. Pospíšil, P. Roy, B. Sopko, M. Šiňor, J. Švejda, V. Vorobel, I. Wilhelm, "Scanning of irradiated silicon detectors using alpha particles and low-energy protons", Nuclear Instruments and Methods in Physics Research A 434 (1999) 118-130 (1999)

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