Silicon planar MESA diodes as radiation detectors
Autor
Houdayer A.
| Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
|
Lebel C.
| Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
|
Leroy Claude, Prof.
| Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
|
Roy Patric
| Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
|
Linhart Vladimir, Ing. Ph.D.
| UTEF
|
Pospíšil Stanislav, DrSc. Ing.
| UTEF
|
Sopko Bruno
| KF FSI ČVUT
|
Courtemanche S.
| Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
|
Stafford M.C.
| Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
|
Rok
2002
Časopis
Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595
Web
Obsah
Silicon diodes built according to the planar MESA process are investigated for their possible use as radiation detectors. Electrical characteristics of planar MESA (PM) detectors are studied as a function of applied bias voltage and 10 MeV proton fluence in view of possible application in high-radiation environment. A comparison is made between the features of PM and silicon standard planar (SP) detectors.
Příklad citace článku:
A. Houdayer, C. Lebel, C. Leroy, P. Roy, V. Linhart, S. Pospíšil, B. Sopko, S. Courtemanche, M. Stafford, "Silicon planar MESA diodes as radiation detectors", Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595 (2002)