ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
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ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
ČVUT - České vysoké učení technické v Praze
Publikace  > Články v impaktovaných časopisech  > 'Measurement of energy levels in a silicon detector damaged by neutrons '
Measurement of energy levels in a silicon detector damaged by neutrons

Autor
Sopko Vitek, Ing., Ph.D. UTEF
Sopko Bruno, prof., RNDr., DrSc. UTEF
Chren Dominik Czech Technical University in Prague, Czech Republic

Rok
2011

Časopis
JINST 6 C12020

Web


Obsah
The level of defects in a semiconductor silicon detector diode made of high resistivity N type material and exposed to neutrons in a research nuclear reactor was examined by measuring the thermally stimulated current (TSC). A modified TSC method was employed where the released charge was measured in the reverse direction on a diode with zero bias voltage. Electrons captured in cooled traps due to the photoelectric effect are released when the material is heated. The detector was irradiated with an integral neutron flux of 7.63 × 1015 n/cm2.

Příklad citace článku:
V. Sopko, B. Sopko, D. Chren, "Measurement of energy levels in a silicon detector damaged by neutrons ", JINST 6 C12020 (2011)

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