Characterization of area sensitivity in 55 um
pixellated CdTe X-ray imaging detectors
Autor
Rok
2007
Časopis
IEEE NSS Conf. Proc. (2007) N24-98
Obsah
X-ray imaging detectors with energy resolution,
based on a single photon processing CMOS readout circuit
attached to a detector chip, are being developed by different
groups. In order to achieve high quantum efficiency it is
preferable to use high-Z semiconductor materials. However the
fluorescent X-ray photons of such materials have high energies
and are able to travel long distances thereby reducing both the
spatial resolution and the energy resolution of the detector. In
addition charge sharing in the detector and non-uniformities in
both the detector and the readout electronics will affect the
signal. In this work we have characterized a 1 mm thick CdTe
detector with a pixel size of 55 um x 55 um, bump bonded to the
MEDIPIX2 single photon processing readout chip [1]. The area
sensitivity of the detector is evaluated using a narrow X-ray
beam of monoenergetic photons. From these measurements the
effects of fluorescence and charge sharing can be evaluated.
Projekty
Příklad citace článku:
C. Frojdh, B. Norlin, J. Jakůbek, T. Holý, A. Frojdh, E. Frojdh, "Characterization of area sensitivity in 55 um
pixellated CdTe X-ray imaging detectors", IEEE NSS Conf. Proc. (2007) N24-98 (2007)