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Publication > 'The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements'

The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements

Author

Čermák Pavel, Ing., Ph.D.	IEAP
Štekl Ivan, Doc. Ing. CSc.	IEAP
Bočarov Viktor, Ing.	IEAP
Jakůbek Jan, Ing. Ph.D.	IEAP
Pospíšil Stanislav, Ing. DrSc.	IEAP
Fiederle Michael, Dr.	FMF University of Freiburg
Zuber K	Institut für Kern- und Teilchenphysik, Technische Universität Dresden, Germany

Year

2008

Scientific journal

IEEE NSS/MIC/RTSD Conf. Proc.

Web

http://www.nss-mic.org/2008/NSSMain.asp

Abstract

This work aims at the characterization of cadmiumtelluride detector bump-bonded on the TimePix readout chip and the evaluation of its potential as a tool to study the double beta decay (bb) processes (such as b−b− or EC/EC), typically performed in ultra low background conditions. First tests with the CdTe pixelated sensor (256×256 pixel matrix, 55μm pitch, 1mm sensor thickness) have been performed. The results of the device calibration and testing of the spectroscopic properties as well as the estimation of intrinsic background of the device are presented.

Cite article as:

P. Čermák, I. Štekl, V. Bočarov, J. Jakůbek, S. Pospíšil, M. Fiederle, K. Zuber, "The Characterization of CdTe TimePix Device and the Study of its Capabilities for the Double Beta Decay Measurements", IEEE NSS/MIC/RTSD Conf. Proc. (2008)