Publication
> 'Charge Collection Characterization with
Semiconductor Pixel Detector Timepix'
Charge Collection Characterization with
Semiconductor Pixel Detector Timepix
Author
Year
2008
Scientific journal
IEEE NSS/MIC/RTSD Conf. Proc. (2008) R12-37
Abstract
The charge sharing effect in pixel semiconductor detector is a
theoretically well described phenomenon where the charge
created by the particle spreads out during the charge collection
process and it can be finally collected by several adjacent pixels
forming a cluster. However, the experimental confirmation of
models describing charge sharing has been little investigated and
difficult to realize. The novel semiconductor pixel detector
Timepix (newly developed successor of the Medipix2 device
developed by Medipix collaboration) stands as a perfect tool to
explore this effect. The device consists of a semiconductor
detector chip (300 μm thick silicon) bump-bonded to a readout
chip. The detector chip is equipped with a single common
backside electrode and a front side matrix of electrodes (256 x
256 square pixels with pitch 55 μm). These pixels behave like
independent channels each with devoted read-out electronics. In
the so-called Time-Over-Threshold mode, Timepix enables direct
energy measurement in each pixel. This contribution shows the
experimental results of probing charge collecting processes
acquired with radiation sources and the Timepix detector. The
cluster size dependencies on changing conditions such as bias
voltage and temperature were measured and evaluated.
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Cite article as:
M. Kroupa, J. Jakůbek, F. Krejčí, "Charge Collection Characterization with
Semiconductor Pixel Detector Timepix", IEEE NSS/MIC/RTSD Conf. Proc. (2008) R12-37 (2008)