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Publication  > Articles in Impacted Journals  > 'Role of electrode metallization in performance of semi-insulating GaAs radiation detectors'
Role of electrode metallization in performance of semi-insulating GaAs radiation detectors

Author
Dubecký František Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
Boháček Pavol Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
Sekáčová Mária Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
Zaťko Bohumír Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
Lalinský Tibor Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
Linhart Vladimir, Ing. Ph.D. IEAP
Mudroň Ján Magic Trading Corporation, a.c., Kuzmanyho 11, Liptovsky Mikulas SK-031 01, Slovak Republic
Pospíšil Stanislav, DrSc. Ing. IEAP

Year
2007

Scientific journal
NIM A 576 (2007) 87–89

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Abstract
In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from ‘‘detector-grade’’ bulk SI GaAs are characterized by current–voltage measurements and their detection performance is evaluated from pulse-height spectra of 241Am and 57Co g-sources. Observed results are evaluated and discussed. Importance of the optimized electrodes technology of SI GaAs detector with good performance is demonstrated.
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Cite article as:
F. Dubecký, P. Boháček, M. Sekáčová, B. Zaťko, T. Lalinský, V. Linhart, J. Mudroň, S. Pospíšil, "Role of electrode metallization in performance of semi-insulating GaAs radiation detectors", NIM A 576 (2007) 87–89 (2007)

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