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Silicon planar MESA diodes as radiation detectors

Author

Houdayer A.	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Lebel C.	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Leroy Claude, Prof.	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Roy Patric	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Linhart Vladimir, Ing. Ph.D.	IEAP
Pospíšil Stanislav, DrSc. Ing.	IEAP
Sopko Bruno	KF FSI ČVUT
Courtemanche S.	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Stafford M.C.	Universite de Montreal, Montreal (Quebec), Canada H3C 3J7

Year

2002

Scientific journal

Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595

Web

http://dx.doi.org/10.1016/S0168-9002(01)01646-1

Abstract

Silicon diodes built according to the planar MESA process are investigated for their possible use as radiation detectors. Electrical characteristics of planar MESA (PM) detectors are studied as a function of applied bias voltage and 10 MeV proton fluence in view of possible application in high-radiation environment. A comparison is made between the features of PM and silicon standard planar (SP) detectors.

Cite article as:

A. Houdayer, C. Lebel, C. Leroy, P. Roy, V. Linhart, S. Pospíšil, B. Sopko, S. Courtemanche, M. Stafford, "Silicon planar MESA diodes as radiation detectors", Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595 (2002)