High Sensitive Micro-pixel Avalanche Photodiodes
Farid Ahmadov
Azerbaijan National Academy of Sciences- AD and İRP, Baku, Azerbaijan
Abstract: Recently, many types of Silicon photomultiplier tubes (SiPM) are produced by various manufacturers and available on markets. One of the successful types of SiPM is micro pixel avalanche photodiodes (MAPD) which combine the advantages of conventional photomultipliers and solid-state photodetectors. A new generation of MAPD with deeply buried pixels and micro-pixel avalanche phototransistors developed by MAPD Collaboration. Within the framework of the collaboration, the various samples of MAPD produced in order to improve the key parameters of the device. Periodically, 2-3 times a year, with the support of Zecotek Photonics, photodiodes are manufactured at research centers as MIMOS (Malaysia), NanoFab (Korea) and Mikron (Russia). These type of photodiodes allowed improving their main parameters such as photon detection efficiency (PDE), linearity, a sensitive area, capacitance etc. MAPD possesses advantages such as low operation voltage (~90 V), high gain (~106), high photon detection efficiency (~40%), high pixel density (up to 4×104 pixels/mm2). Typical photosensitive area of MAPDs is 1.0×1.0, 3.0×3.0 and 3.7×3.7 mm2 etc. Main MAPD features are discussed and a number of examples of its applications are demonstrated in this seminar. Performance of MAPDs is described with different scintillator samples for various ionization particles and radiation types.
Seminar takes place on Tuesday, June 19th 2018 at 2:00 PM
in the IEAP meeting room, Praha 2 ‐ Albertov, Horská 3a/22.
| doc. Dr. André Sopczak seminar organizer |
doc. Ing. Ivan Štekl, CSc. director of IEAP |
doc. Dr. André Sopczak IEEE CS - NPSS chair |
NUCLEAR & PLASMA SCIENCES SOCIETY CHAPTER
IEEE Czechoslovakia section
http://www.ieee.cz/en/nps