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ÚTEF - Ústav technické a experimentální fyziky ČVUT - České vysoké učení technické v Praze
ČVUT - České vysoké učení technické v Praze
Publikace  > Články v impaktovaných časopisech  > 'Radiation hardness properties of full-3D active edge silicon sensors'
Radiation hardness properties of full-3D active edge silicon sensors

Autor
Da Viá Cinzia Manchester University, Oxford Road, Manchester M13 9PL, UK
Hasi Jasmine Manchester University, Oxford Road, Manchester M13 9PL, UK
Kenney Chris Molecular Biology Consortium, Chicago, USA
Linhart Vladimir, Ing. Ph.D. UTEF
Parker Sherwood University of Hawaii, 874 Dillingham Blvd, Honolulu, HI 96817, USA
Slavíček Tomáš, Bc. UTEF
Watts Stephen Manchester University, Oxford Road, Manchester M13 9PL, UK
Bém Pavel Nuclear Physics Institute, Academy of Sciences of the Czech Republic, Rez near Prague, CZ-25068, Czech Republic
Horažďovský Tomáš, Ing. UTEF
Pospíšil Stanislav,  Ing. DrSc. UTEF

Rok
2008

Časopis
NIM A 587 (2008) 243–249

Web


Obsah
Full-three-dimensional (3D) pixel sensors, with electrodes penetrating through the entire silicon wafer, were fabricated at the Stanford Nanofabrication Facility, Stanford, California, USA. They have 71-μm-inter-electrode spacing, active edges and a compatible geometry to the ATLAS pixel detector readout electronics. Several samples were irradiated with neutrons to different doses up to an equivalent fluence of 8.6×1015 n1 MeVeq cm−2. This corresponds to the integrated fluence expected after 5 years at the Large Hadron Collider (LHC) with a luminosity of 1035 cm−2 s−1 at 4 cm from the interaction point, where the ATLAS B-Layer is placed. Before and after irradiation, signals were generated by a 1060 nm infrared laser calibrated to inject a charge of 14 fC. This corresponds to 3.5 minimum ionizing particles and should not perturb the charge status of the radiation-induced defects. After 8.6×1015 n1 MeVeq cm−2 the signal collected was 38% and corresponded to 7200e− for a substrate thickness of 235 μm. Signal efficiency, radiation-induced leakage current and related damage parameters are discussed here and compared with simulations. Full-3D silicon detectors with active edges are being considered for forward proton tagging at the LHC, for the ATLAS pixel B-layer replacement and for the ATLAS pixel upgrade.
Projekty


Příklad citace článku:
C. Da Viá, J. Hasi, C. Kenney, V. Linhart, S. Parker, T. Slavíček, S. Watts, P. Bém, T. Horažďovský, S. Pospíšil, "Radiation hardness properties of full-3D active edge silicon sensors", NIM A 587 (2008) 243–249 (2008)

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