Role of electrode metallization in performance of semi-insulating GaAs radiation detectors
Autor
Dubecký František
| Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
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Boháček Pavol
| Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
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Sekáčová Mária
| Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
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Zaťko Bohumír
| Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
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Lalinský Tibor
| Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava SK-841 04, Slovak Republic
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Linhart Vladimir, Ing. Ph.D.
| UTEF
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Mudroň Ján
| Magic Trading Corporation, a.c., Kuzmanyho 11, Liptovsky Mikulas SK-031 01, Slovak Republic
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Pospíšil Stanislav, DrSc. Ing.
| UTEF
|
Rok
2007
Časopis
NIM A 576 (2007) 87–89
Web
Obsah
In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from ‘‘detector-grade’’ bulk SI GaAs are characterized by current–voltage measurements and their detection performance is evaluated from pulse-height spectra of 241Am and 57Co g-sources. Observed results are evaluated and discussed. Importance of the optimized electrodes technology of SI GaAs detector with good performance is demonstrated.
Granty
Projekty
Příklad citace článku:
F. Dubecký, P. Boháček, M. Sekáčová, B. Zaťko, T. Lalinský, V. Linhart, J. Mudroň, S. Pospíšil, "Role of electrode metallization in performance of semi-insulating GaAs radiation detectors", NIM A 576 (2007) 87–89 (2007)